650V 11A a MOS TM Power Transistor

General Description The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability t

高压MOSFET (500V - 1000V)

650V 11A a MOS Power Transistor

General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=11A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and AC-DC applications