650V 11A a MOS Power Transistor

General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

高压MOSFET (500V - 1000V)

650V 11A αMOS™ Power Transistor

N-Channel 650 V (D-S) MOSFET

文件：1.03217 Mbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：304.12 Kbytes Page：2 Pages

650V 11A a MOS TM Power Transistor

General Description The AOT11S65L & AOB11S65L & AOTF11S65L & AOTF11S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guar

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=11A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

650V 11A a MOS TM Power Transistor

General Description The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability t

isc N-Channel MOSFET Transistor

文件：294.82 Kbytes Page：2 Pages