P-Channel Enhancement Mode Field Effect Transistor

General Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets

P-Channel 40 V (D-S) MOSFET

FEATURES • Compliant to RoHS Directive 2002/95/EC

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 45mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOU413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. Standard Product AOU413 is Pb-free (meets

SOT23 NPN silicon planar avalanche transistor

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