N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOU408 is Pb-free (meets ROHS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 105V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 28mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOU408 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOU408 is Pb-free (meets ROHS

Detectable Buried Barricade Tapes 400 Series

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Sanding

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Interconnection Cord with Plug G-Horizontal, Angled

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GP-IB Cable Assembly EMI/RFI Shielding Version

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