isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.9mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOSFET：N-Channel

PACKAGE MARKING DESCRIPTION

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PACKAGE MARKING DESCRIPTION

文件：117.78 Kbytes Page：1 Pages

PNP high-voltage transistors

DESCRIPTION PNP transistors in a TO-126; SOT32 plastic package. NPN complements: BF469 and BF471. FEATURES • Low feedback capacitance. APPLICATIONS • Class-B video output stages in television receivers and for high-voltage IF output stages.

Precision, High-Side Current-Sense Amplifiers

General Description The MAX471/MAX472 are complete, bidirectional, high side current-sense amplifiers for portable PCs, tele phones, and other systems where battery/DC power-line monitoring is critical. High-side power-line  monitoring is especially useful in battery-powered systems, since i

Precision, High-Side Current-Sense Amplifiers

General Description The MAX471/MAX472 are complete, bidirectional, high side current-sense amplifiers for portable PCs, tele phones, and other systems where battery/DC power-line monitoring is critical. High-side power-line  monitoring is especially useful in battery-powered systems, since i

Silicon NPN Transistor RF Power Output PO = 1.8W @ 175MHz

Description: The NTE472 is a silicon NPN transistor designed for amplifier, frequency multiplier or oscillator applications in military, mobile marine and citizens band equipment. Suitable for use as output driver or pre–driver stages in VHF and UHF equipment. Features: • Specified 12.5

PNP Darlington General purpose

PNP Darlington General purpose External dimensions D • • • STA (10-pin)