600V 42A aMOSTM Power Transistor

This report applies for 600V 42A αMOSTM Power Transistor AOTF42S60. AOTF42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guara

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 39A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 99mΩ (Max) • 100 avalanche tested • Minimum

PACKAGE MARKING DESCRIPTION

文件：127.65 Kbytes Page：1 Pages

高压MOSFET (500V - 1000V)

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 39A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 99mΩ (Max) • 100 avalanche tested • Minimum

PACKAGE MARKING DESCRIPTION

文件：127.65 Kbytes Page：1 Pages

高压MOSFET (500V - 1000V)

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 37A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 109mΩ (Max) • 100 avalanche tested • Minimum

600V 37A a MOS Power Transistor

General Description The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability th

600V 37A a MOS

General Description The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability th

600V 37A a MOS TM Power Transistor

General Description The AOT42S60L & AOB42S60L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capabilit

600V 39A a MOS Power Transistor

General Description The AOK42S60 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this device can be