600V 37A a MOS Power Transistor

General Description The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability th

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 37A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 109mΩ (Max) • 100 avalanche tested • Minimum

高压MOSFET (500V - 1000V)

600V 37A αMOS™ Power Transistor

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

600V 37A a MOS

General Description The AOT42S60 & AOB42S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability th

600V 37A a MOS TM Power Transistor

General Description The AOT42S60L & AOB42S60L have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capabilit

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 39A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 99mΩ (Max) • 100 avalanche tested • Minimum

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 39A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 99mΩ (Max) • 100 avalanche tested • Minimum

isc N-Channel MOSFET Transistor

• DESCRITION • Be suitable for synchronous rectification for server and general purpose applications • FEATURES • Drain Current –ID= 39A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 99mΩ (Max) • 100 avalanche tested • Minimum

isc N-Channel MOSFET Transistor

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