位置：首页 > IC中文资料第2729页 > AOTF409
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOTF409 | P-Channel Enhancement Mode Field Effect Transistor General Description The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electricall | AOSMD 万国半导体 |   | |
AOTF409 | isc P-Channel MOSFET Transistor • FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • PFC stages • LCD & PDP TV • Power supply • Swi | ISC 无锡固电 | | |
AOTF409 | P-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC | VBSEMI 微碧半导体 | | |
AOTF409 | P沟道MOSFET (8V - 60V) | AOS 美国万代 | | |
P-Channel Enhancement Mode Field Effect Transistor General Description The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electricall | AOSMD 万国半导体 | | ||
RECTIFIER DIODE RECTIFIER DIODE Repetitive voltage up to 600 V Mean forward current 3863 A Surge current 30 kA | POSEICO | | ||
Very Wideband, Low Distortion Monolithic Op Amp 文件：403.97 Kbytes Page：10 Pages | NSC 国半 | | ||
Very Wideband, Low Distortion Monolithic Op Amp 文件：403.97 Kbytes Page：10 Pages | NSC 国半 | | ||
Very Wideband, Low Distortion Monolithic Op Amp 文件：403.97 Kbytes Page：10 Pages | NSC 国半 | | ||
Very Wideband, Low Distortion Monolithic Op Amp 文件：403.97 Kbytes Page：10 Pages | NSC 国半 | |
AOTF409产品属性
- 类型
描述
- 型号
AOTF409
- 功能描述
MOSFET P-CH 60V 5.4A TO220FL
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
24+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
AOS/万代 |
2026+ |
TO-220 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
AOS/万代 |
25+ |
原装 |
32360 |
AOS/万代全新特价AOTF409即刻询购立享优惠#长期有货 |
|||
AOS/万代 |
25+ |
TO220FL |
25000 |
AOS/万代全系列在售 |
|||
AO |
21+ |
TO220F |
10065 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AOS |
21+ |
TO220FL |
1000 |
只做原装,一定有货,不止网上数量,量多可订货! |
|||
AOS |
23+ |
TO-220F |
8650 |
受权代理!全新原装现货特价热卖! |
|||
AOS/万代 |
23+ |
TO220FL |
30000 |
原装正品假一罚十,代理渠道价格优 |
|||
AOS |
20+ |
TO-220FL |
1000 |
||||
AOS |
24+ |
TO-220F |
19689 |
公司现货库存 支持实单 |
AOTF409规格书下载地址
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DdatasheetPDF页码索引
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