P-Channel Enhancement Mode Field Effect Transistor

General Description The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electricall

isc P-Channel MOSFET Transistor

• FEATURES • With TO-220F packaging • High speed switching • Very high commutation ruggedness • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • PFC stages • LCD & PDP TV • Power supply • Swi

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC

P沟道MOSFET (8V - 60V)

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOTF409/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the TO220FL package, this device is well suited for high current load applications.AOTF409 and AOTF409L are electricall

Interval Timer

APPLICATIONS: Designed to control an electrical circuit for a set time upon operation of the manual setting knob which is directly connected to the switch operating cam. To assure positive setting action, this timer does not set through a clutch. Calibrated dial settings are available in ranges fr

SPACERS & STANDOFFS

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Passive Components

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Detectable Buried Barricade Tapes 400 Series

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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