型号 功能描述 生产厂家 企业 LOGO 操作
AOTF404

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. -RoHS Compliant -AOTF404L Halogen Free F

AOSMD

万国半导体

AOTF404

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 26A@ TC=25℃ • Drain Source Voltage- : VDSS= 105V(Min) • Static Drain-Source On-Resistance : RDS(on) = 28mΩ (Max) • 100 avalanche tested • Minimum Lot-to-L

ISC

无锡固电

AOTF404

MOSFET:N-Channel

AOS

美国万代

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOTF404/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. -RoHS Compliant -AOTF404L Halogen Free F

AOSMD

万国半导体

Integrated Soldier Power and Data Management System (ISPDS) with Integrated SOM

FEATURES DESCRIPTION The modern digital soldier is a fully equipped, advanced weapon and communication systems - outfitted with a multitude of electronic devices. These devices, such as a navigation systems, battery packs, headsets, warning sensors, video visor for weapons, night vision glass

ENERCON

Capacity (20-hour) 77Ah

文件:248.13 Kbytes Page:1 Pages

GSYUASABATTERY

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

文件:597.06 Kbytes Page:3 Pages

MARATHON

Position Sensor

文件:242.42 Kbytes Page:3 Pages

BITECH

4 and 7-port industrial-grade USB hubs

文件:703.3 Kbytes Page:4 Pages

moxa

台湾摩莎

AOTF404产品属性

  • 类型

    描述

  • 型号

    AOTF404

  • 功能描述

    MOSFET N-CH 105V 5.8A TO220FL

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-26 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS/万代
23+
TO-220FL
24190
原装正品代理渠道价格优势
AO/万代
24+
TO-220F
9000
只做原装,欢迎询价,量大价优
Alpha & Omega Semiconductor In
22+
TO2203
9000
原厂渠道,现货配单
AOS
24+
TO-220F
19688
公司现货库存 支持实单
AOS/万代
2019+
TO220F
6700
原厂渠道 可含税出货
AOS(万代)
24+
标准封装
21663
我们只是原厂的搬运工
AOS/万代
20+
TO-220FL
7500
现货很近!原厂很远!只做原装
AOS(万代)
23+
标准封装
20000
正规渠道,只有原装!
AOS万代
25+
TO-TO-220FL
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
AOS(万代)
2511
标准封装
20000
电子元器件采购降本30%!原厂直采,砍掉中间差价

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