型号 功能描述 生产厂家 企业 LOGO 操作
AOTF25S65

650V 25A a MOS Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

AOSMD

万国半导体

AOTF25S65

650V 25A a MOS TM Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

AOSMD

万国半导体

AOTF25S65

650V 25A a MOS TM Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

AOSMD

万国半导体

AOTF25S65

高压MOSFET (500V - 1000V)

AOS

美国万代

AOTF25S65

isc N-Channel MOSFET Transistor

文件:295.04 Kbytes Page:2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件:295.05 Kbytes Page:2 Pages

ISC

无锡固电

650V 25A a MOS Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

AOSMD

万国半导体

650V 25A a MOS TM Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

AOSMD

万国半导体

650V 25A a MOS TM Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

AOSMD

万国半导体

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.19Ω (Max) • 100 avalanche tested • Minimum Lot-to-

ISC

无锡固电

650V 25A a MOS TM Power Transistor

General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

AOSMD

万国半导体

AOTF25S65产品属性

  • 类型

    描述

  • 型号

    AOTF25S65

  • 功能描述

    MOSFET N-CH 650V 25A TO220F

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    aMOS™

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-11-23 22:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS
24+
TO-220F
19654
公司现货库存 支持实单
AOS/万代
25+
TO-220F
54558
百分百原装现货 实单必成 欢迎询价
AOS(万代)
24+
标准封装
8913
我们只是原厂的搬运工
AOS/万代
23+
TO-220F
24190
原装正品代理渠道价格优势
AOS/万代
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
AOS万代
20+
TO-220F
36900
原装优势主营型号-可开原型号增税票
AOS/万代
1511+
TO-220F
90
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOS/万代
22+
TO220F
25000
AOS/万代全系列在售
AOS/万代
23+
50000
全新原装正品现货,支持订货
AOS/万代
1311+
TO-220
27921
进口管盒环保/50

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