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AOTF20S60L价格
参考价格：￥8.6505
型号：AOTF20S60L 品牌：Alpha 备注：这里有AOTF20S60L多少钱，2026年最近7天走势，今日出价，今日竞价，AOTF20S60L批发/采购报价，AOTF20S60L行情走势销售排行榜，AOTF20S60L报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOTF20S60L | 600V 20A a MOS General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch | AOSMD 万国半导体 |   | |
AOTF20S60L | isc N-Channel MOSFET Transistor 文件：296.62 Kbytes Page：2 Pages | ISC 无锡固电 | | |
AOTF20S60L | 高压MOSFET (500V - 1000V) | AOS 美国万代 | | |
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.199Ω (Max) • 100 avalanche tested • Minimum Lot-to-L | ISC 无锡固电 | | ||
600V 20A a MOS Power Transistor General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch | AOSMD 万国半导体 | | ||
600V 20A a MOS TM Power Transistor General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch | AOSMD 万国半导体 | | ||
20.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers 文件：736.64 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | | ||
20.0 Ampere Insulated Dual Common Cathode Super Fast Recovery Rectifiers 文件：280.28 Kbytes Page：2 Pages | THINKISEMI 思祁半导体 | |
AOTF20S60L产品属性
- 类型
描述
- 型号
AOTF20S60L
- 功能描述
MOSFET N-CH 600V 20A TO220F
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS/万代 |
2026+ |
TO-220F |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
AOS/万代 |
25+ |
TO220F |
25000 |
AOS/万代全系列在售 |
|||
AOS(万代) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
AOS |
26+ |
SOT-23 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
AOS/万代 |
21+ |
TO-220F |
30000 |
优势供应 实单必成 可13点增值税 |
|||
AOS/ 万代 |
24+ |
TO-220F |
19644 |
公司现货库存 支持实单 |
|||
AOS/万代 |
23+ |
TO220F |
30000 |
原装正品假一罚十,代理渠道价格优 |
|||
AOS |
19+ |
TO-220F |
1651 |
||||
ALPHA万代 |
17+ |
TO-220F |
6200 |
||||
Alpha & Omega Semiconductor In |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
AOTF20S60L规格书下载地址
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DdatasheetPDF页码索引
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