600V 20A a MOS

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

600V 20A a MOS Power Transistor

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

N-Channel 650-V (D-S) Super Junction MOSFET

文件：1.15441 Mbytes Page：11 Pages

isc N-Channel MOSFET Transistor

文件：296.46 Kbytes Page：2 Pages

高压MOSFET (500V - 1000V)

600V 20A a MOS

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH TO220 分立半导体产品 晶体管 - FET，MOSFET - 单个

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET N-CH TO220 分立半导体产品 晶体管 - FET，MOSFET - 单个

高压MOSFET (500V - 1000V)

isc N-Channel MOSFET Transistor

文件：296.62 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.199Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

600V 20A a MOS Power Transistor

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

600V 20A a MOS TM Power Transistor

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

20.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：736.64 Kbytes Page：2 Pages

20.0 Ampere Insulated Dual Common Cathode Super Fast Recovery Rectifiers

文件：280.28 Kbytes Page：2 Pages