| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOT8N60 | MOSFET:N-Channel AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi | AOS 美国万代 | ||
AOT8N60 | 600V, 8A N-Channel MOSFET 文件:183 Kbytes Page:6 Pages | AOSMD 万国半导体 | ||
AOT8N60 | isc N-Channel MOSFET Transistor 文件:306.22 Kbytes Page:2 Pages | ISC 无锡固电 | ||
AOT8N60 | N-Channel 650V (D-S) Power MOSFET 文件:1.10566 Mbytes Page:10 Pages | VBSEMI 微碧半导体 | ||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and with | FAIRCHILD 仙童半导体 | |||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |||
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM 文件:70.77 Kbytes Page:2 Pages | MOTOROLA 摩托罗拉 | |||
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM 文件:70.77 Kbytes Page:2 Pages | MOTOROLA 摩托罗拉 |
AOT8N60产品属性
- 类型
描述
- Status:
Obsolete
- Package:
TO220
- Configuration:
Single - N
- Vds/V:
600
- Vgs/V:
30
- Id(A)(25℃):
8
- Id(A)(75℃):
6.2
- Pd(W)(25℃):
208
- Rds (on) mΩ max(10V):
900
- Qg (nC):
28.4
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
13+ |
TO-220 |
291 |
全新 发货1-2天 |
|||
AOS/万代 |
23+ |
TO-220 |
24190 |
原装正品代理渠道价格优势 |
|||
AOS |
26+ |
TO-2203L |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
AOS |
22+ |
40000 |
AOS代理分销现货假一罚十 |
||||
Alpha & Omega Semiconductor In |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
AOS万代 |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
AOS/万代 |
20+ |
TO-220 |
290 |
现货很近!原厂很远!只做原装 |
|||
AOS |
11+ |
TO220 |
700 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
AO/万代 |
24+ |
TO-220 |
9000 |
只做原装,欢迎询价,量大价优 |
|||
AOS/万代 |
21+ |
TO-220 |
330000 |
优势供应 实单必成 可13点增值税 |
AOT8N60规格书下载地址
AOT8N60参数引脚图相关
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DdatasheetPDF页码索引
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