N-Channel Enhancement Mode Field Effect Transistor

General Description AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 80A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.3mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

General Description AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit

Temperature Sensors Line Guide

文件：736.09 Kbytes Page：11 Pages

Repulpable Barricade Tapes 500 Series

文件：30.7 Kbytes Page：2 Pages

SLIDE SWITCHES

文件：315.01 Kbytes Page：4 Pages

Single & Dual Output DC/DC Converter

文件：193.2 Kbytes Page：4 Pages

JACK COVERS

文件：30.33 Kbytes Page：1 Pages