N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT460/L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. AOT460and AOT460L are electrically identical. -RoHS Compliant -Halogen Free Features

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=85A@ TC=25℃ • Drain Source Voltage- : VDSS=60V(Min) • Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

中压MOSFET (40V - 400V)

Alpha and Omega Semiconductor采用先进的300mm和200mm工艺，生产各种性能领先的中压SGT产品。\n\n• 电源（初级与次级）\n• 电信\n• BLDC\n• BMS

N-Channel Enhancement Mode Field Effect Transistor

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N-Channel Enhancement Mode Field Effect Transistor

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PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied i

Silicon P-Channel JFET Transistor AF Amp

Absolute Maximum Ratings: Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Reverse Gate–Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Gate Current, IG . . . . . . .

Square Type

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Square Type

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ULTRAFAST RECTIFIERS 4.0 AMPERES 200-600 VOLTS

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