isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 105V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.6mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT402 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT402 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

Rugged PoE Ethernet Switch with Power Distribution Capabilities

FEATURES DESCRIPTION The MILTECH™ 402 Rugged POE Ethernet Switch with Power Distribution Capabilities provides constant LAN & Power between multiple devices used by infantry Soldiers. This MIL-STD, Rugged POE Ethernet Switch with Power Distribution Capabilities features 5 LAN 10/100 (Fast Eth

402/403 All-Welded Flanged Diaphragm Seal

FEATURES „ All-welded construction ensures a leaktight, tamper-proof seal „ Provided standard with corrosion-resistant 316L Stainless steel top housing

Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Standard, Hard Seat

文件：726.25 Kbytes Page：6 Pages

Standard, Hard Seat

文件：726.25 Kbytes Page：6 Pages