N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT400 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 110A@ TC=25℃ ·Drain Source Voltage : VDSS= 75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOT400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOT400 is Pb-free (meets ROHS & Sony 259 specifications). AOT4

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