80V N-Channel MOSFET

General Description The AOT286L/AOB286L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device

isc N-Channel MOSFET Transistor

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N-Channel MOSFET uses advanced trench technology

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中压MOSFET (40V - 400V)

Customer Specification

Construction 1) Component 1 1 X 1 BUSBAR a) Conductor 14 (SOLID) AWG Tinned Copper

Multi-turn Hall-Effect Position Sensor

 Multi-turn: All electrical angles available up to 3600°  Non-contact Hall Effect technology  Compact 25mm diameter size  Wide temperature range (-40~125°C)  Life cycle: 10M rotations  Dust & water resistant (IP 67) Applications  Control valve position feedback  Actuator motor po

GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz

General Description The HMC286 & HMC286E are low cost Low Noise Amplifi ers (LNA) for 2.3 to 2.5 GHz spread spectrum applications. The LNA provides 19 dB of gain and a 1.7 dB noise fi gure from a single positive +3V power supply that consumes only 8.5mA. The typical output 1 dB compression po

Fuseholders - For 3AG, 5 x 20mm, or 2AG Fuses

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Wiha TorqueControl Blades - For Easy Torque, TorqueFix & TorqueVario Handles

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