60V N-Channel MOSFET

General Description The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss a

isc N-Channel MOSFET Transistor

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N-Channel MOSFET uses advanced trench technology

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中压MOSFET (40V - 400V)

Holder/No. 266 / Holder/No. 268

Differential pressure transmitters

Base accuracy • from 0.06 % of calibrated span (optional 0.04 %) Reliable sensing system coupled with very latest digital technologies • provides large turn down ratio up to 100:1 Comprehensive sensor choice • optimize in-use total performance and stability 10–year stability • 0.15

Gauge pressure transmitter low power consumption (1 to 5 V DC and HART)

Base accuracy •0.15 % of calibrated span Reliable sensing system coupled with very latest digital technologies •provides large turn down ratio up to 100:1 Version for low consumption •1 to 5 V DC output with 3 mA maximum consumption Product in compliance with Directive 2011/65/UE

Premium Female/Female Jumper Wires - 40 x 6

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T-1 3/4 STANDARD MIDGET GROOVE

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