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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOT25S65L | 650V 25A a MOS TM Power Transistor General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch | AOSMD 万国半导体 |   | |
isc N-Channel MOSFET Transistor DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.19Ω (Max) • 100 avalanche tested • Minimum Lot-to- | ISC 无锡固电 | | ||
650V 25A a MOS Power Transistor General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch | AOSMD 万国半导体 | | ||
650V 25A a MOS TM Power Transistor General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch | AOSMD 万国半导体 | | ||
650V 25A a MOS TM Power Transistor General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch | AOSMD 万国半导体 | | ||
650V 25A a MOS TM Power Transistor General Description The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch | AOSMD 万国半导体 | |
AOT25S65L产品属性
- 类型
描述
- 型号
AOT25S65L
- 功能描述
MOSFET N-CH 650V 25A TO220
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
aMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS |
23+ |
TO-220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
AOS/万代 |
2450+ |
TO-220 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
AOS/万代 |
23+ |
TO-220 |
24190 |
原装正品代理渠道价格优势 |
|||
AOS/万代 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
AOS |
24+ |
TO-220 |
19419 |
公司现货库存 支持实单 |
|||
Alpha & Omega Semiconductor In |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
AOS |
24+ |
TO220 |
5000 |
只做原装公司现货 |
|||
AOS美国万代 |
25+ |
TOTO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
AOS |
2026+ |
TO-220 |
654 |
原装正品,欢迎来电咨询! |
AOT25S65L规格书下载地址
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DdatasheetPDF页码索引
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