600V 20A a MOS

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.199Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

高压MOSFET (500V - 1000V)

600V 20A a MOS

General Description The AOT20S60 & AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)

The D2PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 35-60 VOLTS The I2PAK Power rectifier employs the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * LowForward Voltage. * LowSwitching noise. * High Current Capacity

Super Low Barrier High Voltage Power Rectifier

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DUAL MOS GATED BARRIER RECTIFIERS

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