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AOT1100L

100V N-Channel Rugged Planar MOSFET

General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current sw

AOSMD

万国半导体

AOT1100L

MOSFET:N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美国万代

AOT1100L

isc N-Channel MOSFET Transistor

文件:303.58 Kbytes Page:2 Pages

ISC

无锡固电

AOT1100L

N-Channel MOSFET uses advanced trench technology

文件:1.64517 Mbytes Page:5 Pages

DOINGTER

杜因特

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

MOTOROLA

摩托罗拉

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

MOTOROLA

摩托罗拉

SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)

Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

MOSPEC

统懋

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

NEC

瑞萨

AOT1100L产品属性

  • 类型

    描述

  • Status:

    Last Time Buy

  • Package:

    TO220

  • Configuration:

    Single - N

  • Vds/V:

    100

  • Vgs/V:

    20

  • Id(A)(25℃):

    130

  • Id(A)(75℃):

    92

  • Pd(W)(25℃):

    500

  • Pd(W)(75℃):

    250

  • Rds (on) mΩ max(10V):

    12

  • Qg (nC):

    82

更新时间:2026-5-19 21:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS万代
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
AOS
21+
TO-220铁头
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOS/万代
2450+
TO-220
6540
只做原装正品假一赔十为客户做到零风险!!
AOS/万代
21+
TO-220
330000
优势供应 实单必成 可13点增值税
AOS
25+
TO-220铁头
10065
原装正品,有挂有货,假一赔十
AOS
12+
TO-220
1523
全新 发货1-2天
AOS/万代
23+
TO-220
24190
原装正品代理渠道价格优势
AOS
26+
TO-2203L
86720
全新原装正品价格最实惠 假一赔百
Alpha & Omega Semiconductor In
22+
TO2203
9000
原厂渠道,现货配单
AOS/万代
25+
TO-220
20000
原装

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