位置:首页 > IC中文资料第998页 > AOT1100L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOT1100L | 100V N-Channel Rugged Planar MOSFET General Description The AOT1100L/AOB1100L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current sw | AOSMD 万国半导体 | ||
AOT1100L | isc N-Channel MOSFET Transistor 文件:303.58 Kbytes Page:2 Pages | ISC 无锡固电 | ||
AOT1100L | N-Channel MOSFET uses advanced trench technology 文件:1.64517 Mbytes Page:5 Pages | DOINGTER 杜因特 | ||
AOT1100L | MOSFET:N-Channel | AOS 美国万代 | ||
Schottky Power Rectifier(Surface Mount Power Package) Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit | MOTOROLA 摩托罗拉 | |||
ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot | MOTOROLA 摩托罗拉 | |||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V) Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and | MOSPEC 统懋 | |||
DUAL SWITCHING REGULATOR CONTROL CIRCUIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 | |||
DUAL SWITCHING REGULATOR CONTROL CIRCUIT SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N | NEC 瑞萨 |
AOT1100L产品属性
- 类型
描述
- 型号
AOT1100L
- 功能描述
MOSFET N CH 100V 92A TO220
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS万代 |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
AOS |
26+ |
TO-2203L |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
AOS |
25+ |
TO-220铁头 |
10065 |
原装正品,有挂有货,假一赔十 |
|||
AOS |
23+ |
TO220 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
AOS/万代 |
2450+ |
TO-220 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
AOS/万代 |
23+ |
TO-220 |
24190 |
原装正品代理渠道价格优势 |
|||
AOS/万代 |
20+ |
TO-220 |
32500 |
现货很近!原厂很远!只做原装 |
|||
AOS/万代 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
|||
Alpha & Omega Semiconductor In |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
AOS/ 万代 |
24+ |
TO-220 |
19296 |
公司现货库存 支持实单 |
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AOT1100L规格书下载地址
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DdatasheetPDF页码索引
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