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AOT10B60D价格

参考价格:¥5.2527

型号:AOT10B60D 品牌:Alpha 备注:这里有AOT10B60D多少钱,2026年最近7天走势,今日出价,今日竞价,AOT10B60D批发/采购报价,AOT10B60D行情走势销售排行榜,AOT10B60D报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AOT10B60D

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

AOT10B60D

AlphaIGBT™

AlphaIGBT 提供业界领先的快速关断和低 VCE(SAT) 性能,从而实现更大的安全设计空间。可控的接通di/dt可有效降低EMI设计,适用于大多数家用电器、工业和汽车应用。\n\n• 更低的导通损耗\n• 更低的开关损耗\n• 更低的EMI性能\n• 更高的坚固性

AOS

美国万代

AOT10B60D

封装/外壳:TO-220-3 包装:管件 描述:IGBT 600V 20A 163W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ETC

知名厂家

FRD - For Power Factor Improvement High Frequency Recification

FEATURES * Fully Molded Isolation * Dual Diodes – Cathode Common * Ultra – Fast Recovery * Low Forward Voltage Drop * High Surge Capability

NIEC

FOR POWER FACTOR IMPROVEMENT HIGH FREQUENCY RECTIFICATION

FEATURES * Fully Molded Isolation Case * Ultra – Fast Recovery * Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability

NIEC

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien

IRF

AOT10B60D产品属性

  • 类型

    描述

  • Package:

    TO220

  • Configuration:

    IGBT with Anti-Parallel Diode

  • Qg (nC):

    17.40

  • Qrr (nC):

    250

  • VF (V):

    1.52

  • VCE max (V):

    600

  • VCE(SAT) typ (V):

    1.53

  • Ic max @ 25C (A):

    20

  • Ic max @ 100C (A):

    10

  • EON (mJ):

    0.26

  • EOFF (mJ):

    0.07

  • IRM (A):

    5

更新时间:2026-5-14 13:42:00
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AOS
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2450+
TO-220
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只做原装正品假一赔十为客户做到零风险!!
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一级代理-主营优势-实惠价格-不悔选择
AOS
23+
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3187
原厂原装正品

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