IRGS10B60KD价格

参考价格:¥10.5509

型号:IRGS10B60KDPBF 品牌:IR 备注:这里有IRGS10B60KD多少钱,2025年最近7天走势,今日出价,今日竞价,IRGS10B60KD批发/采购报价,IRGS10B60KD行情走势销售排行榜,IRGS10B60KD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRGS10B60KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transien

IRF

IRGS10B60KD

600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:309.73 Kbytes Page:15 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:309.73 Kbytes Page:15 Pages

IRF

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

600V, 10A Alpha IGBT with Diode

General Description The Alpha IGBTTM line of products offers best-in-class performance in conduction and switching losses, with robust short circuit capability. They are designed for ease of paralleling, minimal gate spike under high dV/dt conditions and resistance to oscillations. The soft copac

AOSMD

万国半导体

AOTF10B60D

文件:659.19 Kbytes Page:9 Pages

AOSMD

万国半导体

FRED

文件:162.29 Kbytes Page:1 Pages

NIEC

IRGS10B60KD产品属性

  • 类型

    描述

  • 型号

    IRGS10B60KD

  • 功能描述

    IGBT 晶体管 600V ULTRAFAST 10-30KHZ COPACK IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-9-26 9:48:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
TO-263
50000
全新原装正品现货,支持订货
Infineon(英飞凌)
23+
标准封装
7000
原厂原装现货订货价格优势终端BOM表可配单提供样品
INFINEON/英飞凌
2022+
5000
只做原装,价格优惠,长期供货。
IR
19+
TO263
9000
INFINEON/英飞凌
24+
TO-263
9000
只做原装,欢迎询价,量大价优
IR
TO-263
23+
6000
原装现货有上库存就有货全网最低假一赔万
IR
23+
TO-263
4500
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
INFINEON
1409
con
10
现货常备产品原装可到京北通宇商城查价格
INFINEON/英飞凌
22+
TO-263
18500
原装正品支持实单
INFINEON/英飞凌
2021+
TO-263
9000
原装现货,随时欢迎询价

IRGS10B60KD数据表相关新闻