型号 功能描述 生产厂家 企业 LOGO 操作
AOP610

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

AOSMD

万国半导体

AOP610

Complementary Enhancement Mode Field Effect Transistor

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

AOSMD

万国半导体

Compact, Portable IP67 Military Fast Ethernet Switch

PRODUCT DESCRIPTION Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. When building communications where data prioritization is not a concern and the amount of traffic is low, unmanaged, Fast Ethernet switche

ENERCON

Pulse Encapsulated P.C. Board Mount

Features These ferrite cored transformers are fully encapsulated in a high grade black molded case with a UL94V-O rating. Units are intended for wide band and pulse applications including thyristor / triac firing circuits. Peak pulse voltage rating maximum of 250V. Insulation tested to 1,000

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Innovative Pocket-Sized Measurement Technology

文件:238.32 Kbytes Page:10 Pages

TESTO

횠6.35mm mounting Black anodised aluminium housing

文件:411.03 Kbytes Page:4 Pages

MARL

Low Profile

文件:146.02 Kbytes Page:2 Pages

OSCILENT

AOP610产品属性

  • 类型

    描述

  • 型号

    AOP610

  • 功能描述

    MOSFET N/P-CH COMPL 30V 8-PDIP

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2025-10-2 14:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Alpha&Omega
24+
8-DIP
4965
AOS/万代
25+
PDIP-8
54558
百分百原装现货 实单必成 欢迎询价
AOS
07+
DIP-8
35000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOS/万代
21+
PDIP-8
30000
优势供应 实单必成 可13点增值税
AOS/万代
23+
PDIP-8
24190
原装正品代理渠道价格优势
AOS/ 万代
24+
DIP8
19151
公司现货库存 支持实单
AOS/万代
24+
DIP8
60000
AOS/万代
2019+
DIP8
6700
原厂渠道 可含税出货
IR
23+
PDIP-8
6500
专注配单,只做原装进口现货
AOS/万代
23+
DIP
50000
全新原装正品现货,支持订货

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