型号 功能描述 生产厂家 企业 LOGO 操作
AOP610

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

AOSMD

万国半导体

AOP610

Complementary Enhancement Mode Field Effect Transistor

AOS

美国万代

Complementary Enhancement Mode Field Effect Transistor

General Description The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET redu

AOSMD

万国半导体

Tape5 tape measures

Range Description A range of two sizes of Professional specification tape measures, offered with a variety of Merchandising options. Features · Autobrake system – automatically stops the tape from recoiling when extended, offering fast and convenient measuring · Magnetic hook tip – The mag

CARL

Compact, Portable IP67 Military Fast Ethernet Switch

PRODUCT DESCRIPTION Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. When building communications where data prioritization is not a concern and the amount of traffic is low, unmanaged, Fast Ethernet switche

ENERCON

Innovative Pocket-Sized Measurement Technology

文件:238.32 Kbytes Page:10 Pages

TESTO

德图

횠6.35mm mounting Black anodised aluminium housing

文件:411.03 Kbytes Page:4 Pages

MARL

Low Profile

文件:146.02 Kbytes Page:2 Pages

OSCILENT

AOP610产品属性

  • 类型

    描述

  • 型号

    AOP610

  • 功能描述

    MOSFET N/P-CH COMPL 30V 8-PDIP

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 阵列

  • 系列

    -

  • 产品目录绘图

    8-SOIC Mosfet Package

  • 标准包装

    1

  • 系列

    - FET

  • 2 个 N 沟道(双) FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    60V 电流 - 连续漏极(Id) @ 25°

  • C

    3A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    75 毫欧 @ 4.6A,10V Id 时的

  • Vgs(th)(最大)

    3V @ 250µA 闸电荷(Qg) @

  • Vgs

    20nC @ 10V 输入电容(Ciss) @

  • Vds

    - 功率 -

  • 最大

    1.4W

  • 安装类型

    表面贴装

  • 封装/外壳

    PowerPAK? SO-8

  • 供应商设备封装

    PowerPAK? SO-8

  • 包装

    Digi-Reel®

  • 产品目录页面

    1664(CN2011-ZH PDF)

  • 其它名称

    SI7948DP-T1-GE3DKR

更新时间:2025-11-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS/万代
24+
NA/
20
优势代理渠道,原装正品,可全系列订货开增值税票
AOS/ 万代
24+
DIP8
19151
公司现货库存 支持实单
AOS/万代
25+
PDIP-8
54558
百分百原装现货 实单必成 欢迎询价
Alpha&Omega
24+
8-DIP
4965
AOS/万代
2019+
DIP8
6700
原厂渠道 可含税出货
AOS/万代
23+
PDIP-8
24190
原装正品代理渠道价格优势
AOS
23+
PDIP-8
5000
原装正品,假一罚十
AOS
07+
DIP-8
35000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
AOS/万代
23+
DIP-8
8896
原厂授权代理,海外优势订货渠道。可提供大量库存,详
AOS/万代
23+
DIP
50000
全新原装正品现货,支持订货

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