General Description

The AOP610 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. A Schottky diode in parallel with the n-channel FET reduces body diode related losses. It is

ESD protected. Standard product AOP610 is Pb-free (meets ROHS & Sony 259 specifications). AOP610L is a Green Product ordering option. AOP610 and AOP610L are electrically identical.

Features

n-channel p-channel

VDS (V) = 30V -30V

ID = 7.7A (VGS=10V) -6.2A (VGS=10V)

RDS(ON) RDS(ON)

< 24mΩ (VGS=10V) < 37mΩ (VGS = -10V)

< 42mΩ (VGS=4.5V) < 60mΩ (VGS = -4.5V)

ESD rating: 1500V (HBM)