N-Channel Enhancement Mode Field Effect Transistor

General Description The AON7422 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ideal for load switch and battery protection applications. Product Summary VDS 30V ID (at VGS=10V) 32A RDS(ON) (at VGS=

MOSFET

N-Channel Enhancement Mode Field Effect Transistor

30V N-Channel MOSFET

General Description The AON7422E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS 30V ID (at VGS=10V) 40A

RoHS and Halogen-Free Compliant

General Description • Low RDS(ON) • Optimized for Load Switch • High Current Capability • ESD Protected • RoHS and Halogen-Free Compliant Applications • Battery Charging & Discharging for NB Battery Pack Product Summary VDS 30V ID (at VGS=10V)

N-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Control • Industrial • Load Switch • ORing

场效应管

包装：管件 描述：MOSFET N-CH 8SOIC 分立半导体产品 晶体管 - FET，MOSFET - 单个

MachFlex™, 21G C #16 Str BC, PVC-NYL Ins, OA TC Brd, TPE Jkt, TPE Jkt,1000V WTTC, 600V TC-ER

Product Description MachFlex™ for High Flex, 2+1G Conductor 16AWG (26x30) Bare Copper, PVC-NYL Insulation, Overall Tinned Copper Braid(85%) Shield, TPE Inner Jacket, TPE Outer Jacket, 1000V WTTC, 600V TC-ER

Strain Relief Mounting Hole Punches

文件：130.259 Kbytes Page：1 Pages

짹0.1째C Accuracy, 16-Bit, Digital I2C Temperature Sensor for VSM Applications

文件：419.26 Kbytes Page：23 Pages

Dual-Channel, RF-Sampling AFE With 14-Bit, 9-GSPS DACs and 14-Bit, 3-GSPS ADCs

文件：78.97 Kbytes Page：4 Pages

AFE7422 Dual-channel, RF-sampling AFE with 14-bit, 9-GSPS DACs and 14-bit, 3-GSPS ADCs

文件：362.65 Kbytes Page：8 Pages