30VN-ChannelMOSFET

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BNC(m)/F(f),BNC(f)/F(f),BNC(f)/F(m),BNC(m)/F(m)

Features •True75ΩBNCadapters. •EasilyadaptF-ConnectorstoBNC. •Gold-plated(15micro–inches)contacts. •BNCinsulationmaterialisPTFE(notdelrin). Materials •Bodyismadeofmachinedbrasswithtarnishresistantnickel-plating. •FemaleBNCcentercontact:Gol

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=10.5mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

N-ChannelPowerTrench짰MOSFET

GeneralDescription ThisN-ChannelMOSFEThasbeendesignedspecificallytoimprovetheoverallefficiencyofDC/DCconvertersusingeithersynchronousorconventionalswitchingPWMcontrollers.Ithasbeenoptimizedforlowgatecharge,lowrDS(on)andfastswitchingspeed. Features ■MaxrDS(

Low-Power,1Accurate,Dual-/Triple-/Quad-LevelBatteryMonitorsinSmallTDFNandTQFNPackages

GeneralDescription TheMAX6782–MAX6790arelow-power,1accurate,dual-/triple-/quad-levelbatterymonitorsofferedinsmallTDFNandTQFNpackages.Thesedevicesareidealformonitoringsinglelithium-ion(Li+)cells,ormulticellalkaline/NiCd/NiMHpowersources.Thesedevicesfeaturefixeda