General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.

Features

■ Max rDS(on) = 10.5 mΩ at VGS = 10 V, ID = 14.9 A

■ Max rDS(on) = 24.0 mΩ at VGS = 4.5 V, ID = 11.0 A

■ 100 UIL test

■ RoHS Compliant

Applications

■ Vcore DC-DC for Desktop Computers and Servers

■ VRM for Intermediate Bus Architecture