Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load swit

MOSFET：Dual-Channel

BiMOS II 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVERS WITH ACTIVE-DMOS PULL-DOWNS

The UCN5810AF, UCN5810EPF, and UCN5810LWF combine a 10-bit CMOS shift register and accompanying data latches, control circuitry, bipolar sourcing outputs with DMOS active pull-downs. Designed primarily to drive vacuum-fluorescent displays, the 60 V and -40 mA output ratings also allow these device

Nine Channel PMU for Mobile Phones

GENERAL DESCRIPTION The patent-pending ACT5810 is a complete, integrated power management solution that is ideal for CDMA and GSM mobile phones. This device integrates a linear Li+ battery charger with an internal power MOSFET, six low dropout linear regulators (LDOs), a reset output, and two N-C

ADJUSTABLE 60V LINEAR LED DRIVER

Features - 2.0V to 60V Wide Input Voltage Range - An External Resistor for Setting Current - Low Reference Voltage (VRSET = 0.5V) - Adjustable Sink or Source LED Current Up to 200mA/200mA (W-DFN2020-3/TO-252) - ±3 LED Current Tolerance @Room Temp - Parallel Devices to Increase Regulated Cur

HIGH PERFORMANCE FLEXIBLE 1 VALVE

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60W IEEE802.3bt PD Module

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