N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD484 is Pb-free (meets ROHS & Sony 259 specifications). AOD4

丝印代码：DPAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-252(DPAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

丝印代码：D484；N-Channel 30 V (D-S) MOSFET

APPLICATIONS • OR-ing • Server • DC/DC

MOSFET：N-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

30V N-Channel MOSFET

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30V N-Channel MOSFET

文件：199.15 Kbytes Page：6 Pages

Band-switching diodes

DESCRIPTION Planar high performance band-switching diode in a hermetically sealed glass SOD68 (DO-34) package. FEATURES • Continuous reverse voltage: max. 35 V • Continuous forward current: max. 100 mA • Low diode capacitance: max. 1.0 to 1.6 pF • Low diode forward resistance:

Silicon NPN Transistor RF Power Output for Mobile Use, PO = 25W @ 947MHz

Description: The NTE484 is a 12.5 Volt epitaxial silicon NPN planer transistor designed for primarily for 800MHz mobile communications. This device is internally input matched in the common base configuration for extremely broadband performance and optimum gain characteristics. Features:

GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters 880 nm

GaAIAs Infrared Emitters (880 nm) Features ●Fabricated in a liquid phase epitaxy process ●High reliability ●Spectral match with silicon photodetectors ●SFH 484: Same package as LD 274 ●SFH 485: Same package as SFH 300, SFH 203 Applications ●IR remote control of hi-fi an

Precision Rail-to-Rail Input & Output Operational Amplifiers

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Precision Rail-to-Rail Input & Output Operational Amplifiers

文件：522.84 Kbytes Page：20 Pages