N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifica

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 60A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifica

Dual SPDT Switch

GENERAL DESCRIPTION The ADG436 is a monolithic CMOS device comprising two independently selectable SPDT switches. It is designed on an LC2MOS process, which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very flat over the full a

SMTelecom Fuse 436 Series

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CMOS / TTL Output

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Vibration Damping Tapes

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true one-port, surface-acoustic-wave (SAW) resonator

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