Dual SPDT Switch

GENERAL DESCRIPTION The ADG436 is a monolithic CMOS device comprising two independently selectable SPDT switches. It is designed on an LC2MOS process, which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very flat over the full a

LC2MOS ±15 V、双通道单刀双掷开关

ADG436是一款单芯片CMOS器件，内置两个独立可选的单刀双掷（SPDT）开关。它采用LC2MOS 工艺设计，具有低功耗、高开关速度和低导通电阻特性。 接通时，各开关在两个方向的导电性能相同，输入信号范围可扩展至电源电压范围。在断开条件下，达到电源电压的信号电平被阻止。所有开关均为先开后合式，适合多路复用器应用。设计本身具有低电荷注入特性，当切换数字输入时，可实现较小的瞬变。 • 最大额定电源电压：44 V\n\n• 模拟信号范围：VSS 至VDD\n\n• 低导通电阻：12 Ω（典型值）\n\n• 低导通电阻差（ΔRon）：3 Ω（最大值）\n\n• 低导通电阻匹配：2.5 Ω（最大值）;

Dual SPDT Switch

GENERAL DESCRIPTION The ADG436 is a monolithic CMOS device comprising two independently selectable SPDT switches. It is designed on an LC2MOS process, which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very flat over the full a

Dual SPDT Switch

GENERAL DESCRIPTION The ADG436 is a monolithic CMOS device comprising two independently selectable SPDT switches. It is designed on an LC2MOS process, which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very flat over the full a

Dual SPDT Switch

文件：323.6 Kbytes Page：12 Pages

Dual SPDT Switch

文件：323.6 Kbytes Page：12 Pages

Dual SPDT Switch

文件：323.6 Kbytes Page：12 Pages

Dual SPDT Switch

文件：323.6 Kbytes Page：12 Pages

Dual SPDT Switch

文件：323.6 Kbytes Page：12 Pages

Dual SPDT Switch

文件：323.6 Kbytes Page：12 Pages

Dual SPDT Switch

文件：323.6 Kbytes Page：12 Pages

Dual SPDT Switch

文件：323.6 Kbytes Page：12 Pages

PNP SILICON EPIBASE TRANSISTORS

PNP Silicon Epibase Transistors

NPN SILICON EPIBASE TRANSISTORS

NPN Silicon Epibase Transistors

200MHz, 짹15V, Low-Power Voltage Feedback Op Amp

文件：119.26 Kbytes Page：6 Pages

200MHz, 짹15V, Low-Power Voltage Feedback Op Amp

文件：119.26 Kbytes Page：6 Pages