N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. AOD410L( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 8A RDS(

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 65mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

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MOSFET：N-Channel

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4100 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a High side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) =

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 19A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) =37mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=19A,RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary VDS 30V I

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 75A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.4mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4104 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. -RoHS Compliant -Halogen Free* Features VDS (V) = 2

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications). AOD4106L is

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

MOSFET：N-Channel

30V N-Channel MOSFET

文件：296.66 Kbytes Page：6 Pages

30V N-Channel MOSFET

文件：296.66 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

文件：116.79 Kbytes Page：4 Pages

包装：散装 描述：PUSHBUTTON 30MM 开关 按钮开关

包装：散装 描述：PUSHBUTTON 30MM 开关 按钮开关

Integrated Soldier Power and Data Management System (ISPDS) with USB.3.0 and 1G LAN Capabilities

FEATURES DESCRIPTION The advancement of technologies in the modern warfare has allowed the design of increasingly versatile tools in order to perform effectively and coherently in the battlefield. The modern infantry soldier, fully equipped with advanced weapon and communication systems, has

Heavy-Duty Hydra-Lift Karriers

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Celeron M Processor on 65 nm Process

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Detectable Buried Barricade Tapes 400 Series

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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