isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 19A@ TC=25℃ • Drain Source Voltage- : VDSS=30V(Min) • Static Drain-Source On-Resistance : RDS(on) =37mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot

N-Channel MOSFET uses advanced trench technology

Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=19A,RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4102/AOI4102 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Product Summary VDS 30V I

30V N-Channel MOSFET

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30V N-Channel MOSFET

文件：296.66 Kbytes Page：6 Pages

Ethernet to 1-Port RS-422, RS-485 Serial Server

Features • Ethernet 10/100BaseT (autosense) • Configurable as RS-422 or RS-485 • Appears as a virtual COM port to host machine • Data rates to 230.4K bps • Supports custom baud rates and 9-bit protocol • Automatic RS-485 enable/disable • Hot-swappable • Built-in watchdog/reset circuit auto

Ethernet to 1-Port RS-422, RS-485 Serial Server Kit

Features • Ethernet 10/100BaseT (autosense) • Configurable as RS-422 or RS-485 • Appears as a virtual COM port to host machine • Data rates to 230.4K bps • Supports custom baud rates and 9-bit protocol • Automatic RS-485 enable/disable • Hot-swappable • Built-in watchdog/reset circuit for

Security & Sound, 4 Conductor 14 AWG BC, LSZH

Product Description Security & Commercial Audio Cable, 4-14 AWG stranded (19x27) bare copper conductors with polyolefin insulation, FRNC/LSZH jacket with ripcord.

2.5A, 3MHz Switching Charger with Dynamic Power Path Management

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UMTS/NCDMA/Co-band GSM Rx Band 2 Duplexer

文件：256.04 Kbytes Page：12 Pages