N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD406 is Pb-free (meets ROHS & Sony 25

POWER TRANSISTORS(7A,150-200V,60W)

7 AMPERE POWER TRANSISTOR 150 - 200 VOLTS 60 WATTS

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

These devices are high voltage, high speed transistors for horizontal deflection output stages of TV’s and CRT’s. • High Voltage: VCEV = 330 or 400 V • Fast Switching Speed: tf = 750 ns (max) • Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A • Packaged in Compact JEDEC TO–220AB

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages

Wideband, Low Power Monolithic Op Amp

文件：432.11 Kbytes Page：6 Pages