N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD406 is Pb-free (meets ROHS & Sony 25

N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

N-Channel Enhancement Mode Field Effect Transistor

文件：201.55 Kbytes Page：6 Pages

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD406 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOD406 is Pb-free (meets ROHS & Sony 25

N-Channel Enhancement Mode Field Effect Transistor

文件：201.55 Kbytes Page：6 Pages

Low Voltage and Power Applications

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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Tab connector Lead distributor

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Detectable Buried Barricade Tapes 400 Series

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3.5 x 6.0 mm Ceramic - SM Crystal

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