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AOD3N60价格
参考价格：￥1.1986
型号：AOD3N60 品牌：Alpha 备注：这里有AOD3N60多少钱，2026年最近7天走势，今日出价，今日竞价，AOD3N60批发/采购报价，AOD3N60行情走势销售排行榜，AOD3N60报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
AOD3N60 | N-Channel 650 V (D-S) MOSFET 文件：1.0859 Mbytes Page：9 Pages | VBSEMI 微碧半导体 |   | |
AOD3N60 | 丝印代码：DPAK；isc N-Channel MOSFET Transistor 文件：309.9 Kbytes Page：2 Pages | ISC 无锡固电 | | |
AOD3N60 | N-Channel MOSFET uses advanced trench technology 文件：1.92619 Mbytes Page：5 Pages | DOINGTER 杜因特 | | |
AOD3N60 | 600V,2.5A N-Channel MOSFET 文件：282.44 Kbytes Page：6 Pages | AOSMD 万国半导体 | | |
AOD3N60 | 高压MOSFET (500V - 1000V) | AOS 美国万代 | | |
TMOS POWER FET 3.0 AMPERES 600 VOLTS TheD2PAK package has the capability of housing a larger die thanany existing surface mount package which allows it to be used inapplications that require theuse of surface mount components withhigher power and lower RDS(on)capabilities. This high voltage MOSFETuses an advanced termination scheme | MOTOROLA 摩托罗拉 | | ||
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 2 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100oC ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SWITCH MODE POWER SUPPLIES (SMPS) ■ | STMICROELECTRONICS 意法半导体 | | ||
PowerMOS transistors Avalanche energy rated GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N60E is supp | PHILIPS 飞利浦 | | ||
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS 文件：183.86 Kbytes Page：8 Pages | MOTOROLA 摩托罗拉 | | ||
PowerMOS transistors Avalanche energy rated 文件：73.73 Kbytes Page：8 Pages | PHILIPS 飞利浦 | |
AOD3N60产品属性
- 类型
描述
- 型号
AOD3N60
- 功能描述
MOSFET N-CH 600V 2.5A DPAK
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
AOS(万代) |
2511 |
标准封装 |
20000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
AOS/万代 |
25+ |
TO252 |
20300 |
AOS/万代原装特价AOD3N60即刻询购立享优惠#长期有货 |
|||
AOS/万代 |
23+ |
TO-252 |
9119280 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
AOS/万代 |
2450+ |
TO-252 |
6540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
24+ |
N/A |
58000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
APLHA |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
|||
AOS(万代) |
23+ |
标准封装 |
20000 |
正规渠道,只有原装! |
|||
AOS/万代 |
20+ |
TO-252 |
32500 |
现货很近!原厂很远!只做原装 |
|||
AOS/万代 |
25+ |
TO252 |
25000 |
AOS/万代全系列在售 |
|||
AOS/万代 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
AOD3N60芯片相关品牌
AOD3N60规格书下载地址
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DdatasheetPDF页码索引
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