N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB438 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB438 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB438 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB438 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

3M??Heavy Duty Aluminum Foil Tape 438

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Surface Mount Fuses

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Sanding

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SPACERS & STANDOFFS

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The 438A series AECQ-compliant fuses are specifically tested to cater secondary circuit protection needs of compact auto electronics application

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