N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB436 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB436 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.0mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB436 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB436 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

Dual SPDT Switch

GENERAL DESCRIPTION The ADG436 is a monolithic CMOS device comprising two independently selectable SPDT switches. It is designed on an LC2MOS process, which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is very flat over the full a

PNP SILICON EPIBASE TRANSISTORS

PNP Silicon Epibase Transistors

NPN SILICON EPIBASE TRANSISTORS

NPN Silicon Epibase Transistors

200MHz, 짹15V, Low-Power Voltage Feedback Op Amp

文件：119.26 Kbytes Page：6 Pages

200MHz, 짹15V, Low-Power Voltage Feedback Op Amp

文件：119.26 Kbytes Page：6 Pages