N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB434 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB434 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOB434 is Pb-free (meets ROHS & Sony 259 specifications). AOB4

Linear Precision Potentiometer

Features: •Linear actuation •Conductive plastic •Multiple styles available

Surface Mount Fuses - Thin-Film Surface Mount

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Vibration Damping Tapes

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Precision Potentiometer / Position Sensor

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HCMOS / TTL Output

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