N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 63mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430 is Pb-free (meets ROHS

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430Y is Pb free, inside an

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOB430Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard product AOB430Y is Pb free, inside an

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