P-Channel Enhancement Mode Field Effect Transistor

General Description The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. Standard Product AOB405 is Pb-free (meet

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= -12A@ TC=25℃ ·Drain Source Voltage : VDSS= -40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 48mΩ(Max) @ VGS= -10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor

General Description The AOB405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the D2PAK package, this device is well suited for high current load applications. Standard Product AOB405 is Pb-free (meet

Surface Mount Quartz Crystal

DESCRIPTION The Model 405 is a ceramic packaged Crystal offering reduced size, ideal for high-density circuit board applications. The Model 405 offers reliable precision and excellent shock performance in wireless telecommunication devices. FEATURES • Standard 5.0x3.2mm Surface Mount Footprint

DC axial compact fan

DC axial compact fan ebm-papst St. Georgen GmbH & Co. KG Hermann-Papst-Straße 1 D-78112 St. Georgen Phone +49 7724 81-0 Fax +49 7724 81-1309 info2@de.ebmpapst.com www.ebmpapst.com

NPN Silicon RF Transistor

DESCRIPTION The START405 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performa

DC axial fans

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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