Common-Drain Dual N-Channel Enhancement Mode Field

General Description The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by it

Dual N-Channel 25-V (D-S) MOSFET

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20V Common-Drain Dual N-Channel MOSFET

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Dual N -Channel MOSFET

MOSFET

低压MOSFET (12V - 30V)

Common-Drain Dual N-Channel Enhancement Mode Field

General Description The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by it

Dual N-Channel Enhancement Mode MOSFET

Application Battery protection Battery Powered Systems « Power management » Motor Control » Portable Power Adaptors

20V Common-Drain Dual N-Channel MOSFET

文件：202.86 Kbytes Page：5 Pages

Dual N-Channel 25-V (D-S) MOSFET

文件：974.98 Kbytes Page：8 Pages

INSULATED PC SPACERS/SUPPORTS

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50V, 2A BOOST LED DRIVER

文件：275.37 Kbytes Page：15 Pages

High PSRR, 250mA CMOS LDO

文件：217.23 Kbytes Page：18 Pages