Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. St

Dual N-Channel MOSFET

FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs

20V Common-Drain Dual N-Channel MOSFET

文件：221.93 Kbytes Page：5 Pages

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. AO8810L is offered in a lead-free package. St

20V Common-Drain Dual N-Channel MOSFET

文件：221.93 Kbytes Page：5 Pages

Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets RO

Thermally Conductive Adhesive Transfer Tapes

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Dual N-Channel Enhancement Mode MOSFET

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Dual N-Channel 25-V (D-S) MOSFET

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N-channel power MOS field effect tube

文件：270.42 Kbytes Page：1 Pages