30V N-Channel MOSFET

General Description The AO7400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low c

N-Channel Enhancement Mode Field Effect Transistor

[Alpha & Omega Semiconductor, Ltd.] General Description The AO7400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide variety of applications, including load s

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 1.7 A (VGS = 10V) ● RDS(ON)

低压MOSFET (12V - 30V)

30V N-Channel MOSFET

N-Channel 20 V (D-S) MOSFET

文件：1.06752 Mbytes Page：9 Pages

N-Channel MOSFET

30V N-ch Fast Switching MOSFET

包装：管件 描述：MOSFET N-CH 30V SC70-3 分立半导体产品 晶体管 - FET，MOSFET - 单个

Quad 2-Input NAND Gate?

Quad 2-Input NAND Gate • ESD > 3500 Volts

ADVANCED CAR SIGNAL PROCESSOR

DESCRIPTION The TDA7400 is the newcomer of the CSP family introduced by TDA7460/61. It uses the same innovative concepts and design technologies allowing fully software programmability through I2C bus and overall cost optimisation for the system designer. ■ FULLY INTEGRATED SIGNAL PROCESSOR

GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package

DESCRIPTION TSAL7400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High

Quad 2-Input NAND Gates

文件：94.09 Kbytes Page：4 Pages

QUADRUPLE 2-INPUT POSITIVE-NAND GATES

文件：195.69 Kbytes Page：18 Pages