GaAs/GaAlAs IR Emitting Diode in 짰5 mm (T-13/4) Package

DESCRIPTION TSAL7400 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): ∅ 5 • Peak wavelength: λp = 940 nm • High reliability • High

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

文件：117.43 Kbytes Page：5 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

文件：110.69 Kbytes Page：5 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

文件：99.51 Kbytes Page：5 Pages

封装/外壳：径向 包装：散装 描述：EMITTER IR 940NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

GaAs/GaAlAs IR Emitting Diode in ®5 mm (T-13/4) Package

High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs

文件：117.43 Kbytes Page：5 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

文件：110.69 Kbytes Page：5 Pages

High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

文件：99.51 Kbytes Page：5 Pages

Quad 2-Input NAND Gate

General Description This device contains four independent gates each of which performs the logic NAND function.

Quad 2-Input NAND Gate

General Description The MM74HC00 NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS integrated circuits. All gates have buffered outputs. All devices have high noise immunity and the abilit

Quad 2-Input NAND Gate?

Quad 2-Input NAND Gate • ESD > 3500 Volts

QUAD 2-INPUT NAND GATE

QUAD 2-INPUT NAND GATES

3/4 DIAMETER WIRE-WOUND, MULTI-TURN

[SENSOR SYSTEM, L.L.C.]