N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6706 is Pb-free (meets ROHS

N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6706 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Standard Product AO6706 is Pb-free (meets ROHS

F Type Bulkhead / Panel Feed Through Adapter

Features: • Adapter allows two F type male connectors to connect together, stand alone or through a bulkhead/panel. • Maximum bulkhead or panel thickness: .250” (6,35). • Adapter is precision machined (not die-cast) from brass.

DC TO 2, 4 AND 8 GHz, COAXIAL

FEATURES • Type SMA Connectors Standard • Options from DC to 8 GHz • High Performance, Trough line Style Structure • MIL Grade Materials and Processing • -40 to + 125ºC Operating Temperature Range

PHASE SHIFTER DC TO 2,4 AND 8 GHZ, COAXIAL

FEATURES • Type SMA Connectors Standard • Options from DC to 8Ghz • High Performance, Troughline Style Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

N and P Channel Enhancement Mode Power MOSFET

Description The 6706A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

N and P Channel Enhancement Mode Power MOSFET

Description The 6706AA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters