丝印代码：6706；N and P Channel Enhancement Mode Power MOSFET

Description The 6706AA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

32K x 8 Bit Static Random Access Memory

The MCM6706AR is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon–gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes. Output enable (G) is a special control feature that provides i

32K x 8 Bit Static Random Access Memory

32K x 8 Bit Static Random Access Memory The MCM6706B is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks or timing strobes. Output enable (G) is a special control feature that provides increased system flexibilit

32K x 8 Bit Static Random Access Memory

The MCM6706BR is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks or timing strobes. • Single 5.0 V ± 10 Power Supply • Fully Static — No Clock or Timing Strobes Necessary • All Inputs and Outputs Are TTL Compat

32K x 8 Bit Static Random Access Memory

The MCM6706CR is a 262,144 bit static random access memory organized as 32,768 words of 8 bits. Static design eliminates the need for external clocks or timing strobes. Output enable (G) is a special control feature that provides increased system flexibility and eliminates bus contention problems

32K x 8 Bit Static Random Access Memory

32K x 8 Bit Static Random Access Memory The MCM6706R is a 262,144 bit static random access memory organized as 32,768 words of 8 bits, fabricated using high performance silicon–gate BiCMOS technology. Static design eliminates the need for external clocks or timing strobes. • Single 5.0 V ± 10 Po