Complementary Enhancement Mode Field Effect Transistor

General Description The AO6605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6605 is Pb-free (meets ROHS & Sony 259 specifications). AO

Complementary Enhancement Mode Field Effect Transistor

Complementary Enhancement Mode Field Effect Transistor

General Description The AO6605 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6605 is Pb-free (meets ROHS & Sony 259 specifications). AO

PHASE SHIFTER DC TO 18, 26.5 GHZ, COAXIAL

FEATURES • Type SMA Connectors Standard • Options from DC to 18 GHz • High Performance, Troughline Style Structure • Military Grade Materials and Processing • -40 to + 125º C Operating Temperature Range

AC Film Capacitors Lighting

Features ■ Self-healing properties ■ Low dissipation factor ■ High insulation resisitance Construction ■ Dielectric: polypropylene film ■ Aluminium can ■ Soft polyurethan resin ■ Internal dischage resistor ■ Overpressure disconnector Typical applications For general sine wave applicat

DC TO 18, 26.5 GHz, COAXIAL

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Noise of Sources

文件：703.59 Kbytes Page：5 Pages

Noise of Sources

文件：703.59 Kbytes Page：5 Pages